o ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 STE53NA50 n - channel enhancement mode fast power mos transistor type STE53NA50 vdss 500 v ros(on) ! < 0.085 si id 53 a typical rds STE53NA50 thermal data rthj-case rthoh thermal resistance thermal resistance grease applied junction-case max case-heatsink with conductive max 0.27 0.05 c/w c/w avalanche characteristics symbol iar eas parameter avalanche current. repetitive or not-repetitive (pulse width limited by t, max, 8 < 1%) single pulse avalanche energy (starting t, = 25 c, id = iar, vdd = 50 v) max value 26 1014 unit a mj electrical characteristics (tease = 25 c unless otherwise specified) off symbol v(br)dss loss igss parameter test conditions drain-source id - 1 ma vgs - 0 breakdown voltage zero gate voltage vqs = max rating drain current (vos = 0) vds = max rating tc = 125 c gate-body leakage vgs = 30 v current (vos = 0) min. : typ. 500 max. 100 1000 400 unit v ma ma na symbol vgs(th) rds(oh) id(ori) parameter test conditions gate threshold vds = vgs id = 1 ma voltage static drain-source on vgs=10v id = 27 a resistance on state drain current vds > lo(on) x rosiommax vgs = 10 v min. 2.25 53 typ. 3 0.075 max. 3,75 0.085 unit v a a dynamic symbol 9f.<*> ci.s3 coss parameter test conditions forward vds >ld(on) x rds(od)max id = 27 a transconductance input capacitance vds - 25 v f = 1 mhz vgs = 0 output capacitance reverse transfer capacitance min. typ. 25 ; ; 13 1500 450 max. 16 2000 650 unit s nf pf pf
STE53NA50 electrical characteristics (continued) switching on symbol td(on) tr qg qgs qgti parameter test conditions turn-on time vdd = 250 v id = 27 a rise time ro=4.7ii vgs = 10v (see test circuit, figure 1) total gate charge vdd = 400 v id = 53 a vgs = 10 v gate-source charge gate-drain charge min. typ. 57 92 470 54 219 max. 80 130 658 unit ns ns nc nc nc switching off symbol tr(voff) t! to parameter test conditions off-voltage rise time vdd = 400 v id = 53 a fall time rg = 4.7 q vgs = 10 v cross-over time (see test circuit, figure 3) min. typ. 105 36 145 max. 145 50 205 unit ns ns ns source drain diode symbol isd isdm(') vsd (*) trr qrr irrm parameter test conditions source-drain current source-drain current (pulsed) forward on voltage i so = 53 a vgs = 0 reverse recovery isd = 53 a di/dt = 100 a/us time ;vr = 100 v tj = 150 c reverse recovery (see test circuit, figure 3) charge reverse recovery current min. typ. 1000 31.5 63 max. 53 212 1.6 unit a a v ns mc a t) pulsed: pulse duration - 300 (.is, duty cycle 1.5 % (*) pulse width limited by safe operating area safe operating area for thermal impedance 10 i02 10 * ic'-5 10 ? 10 10 tf cs
STE53NA50 isotop mechanical data dim a b c d e f g h j k l m n o win. 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4,1 14.9 30.1 37.8 4 7.8 mm typ. max. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 4.3 15.1 30.3 38.2 8.2 min. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 inch typ. max. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 0.169 0.594 1.193 1.503 0,322
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